2018-08 至 2023-08，University of Arkansas/阿肯色大学，电气工程，博士

2016-09 至 2019-06，西安电子科技大学，电子通信工程，硕士

2012-09 至 2016-06，华中师范大学，电子科学与技术，学士

2023-09 至 2026-01，University of Arkansas/阿肯色大学，博士后

2026-01 至今，bw·西汉姆联，必威betway西汉姆，副研究员

碳化硅器件设计及制造

碳化硅器件可靠性研究

碳化硅功率模块设计及制造

静电防护器件设计

[1] P. Lai, H. Wang, K. Chen, H. Alan Mantooth and Z. Chen, Design Optimizations of Micrometer SiC CMOS Devices for High-Temperature IC Applications, in IEEE Transactions on Electron Devices, vol. 72, no. 9, pp. 4742-4751, Sept. 2025, doi: 10.1109/TED.2025.3582221.

[2] P. Lai, H. Wang, H. A. Mantooth and Z. Chen, Electrical Safe Operating Area and Latent Damage of SiC Low-Voltage nMOS Under TLP and VF-TLP Stresses, in IEEE Transactions on Electron Devices, vol. 71, no. 12, pp. 7673-7681, Dec. 2024, doi: 10.1109/TED.2024.3475997.

[3] P. Lai, H. Wang, A. Abbasi, S. Roy, A. Rashid, H. A. Mantooth, and Z. Chen, “Area-efficient silicon carbide SCR device for on-chip ESD protection,” IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3022–3028, Jun. 2022, doi: 10.1109/TED.2022.3166471.

[4] D. Gonzalez, P. Lai, S. Chinnaiyan, S. Ahmed, B. Dong, Y. Gong, H. A. Mantooth, S.-Q. Yu, and Z. Chen, “Development of high-temperature optocouplers for gate drivers integrated in high-density power modules,” IEEE Transactions on Industrial Electronics, vol. 70, no. 11, pp. 11003–11012, Nov. 2023, doi: 10.1109/TIE.2022.3229324. (共同第一作者)

[5] P. Lai, S. Chinnaiyan, Z. Feng, S. A. Rmila, H. A. Mantooth, S.-Q. Yu, and Z. Chen, “A 200 °C SiC phase-leg power module with integrated gate drivers: Development, performance assessment, and path forward,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 13, no. 3, pp. 3245–3258, Jun. 2025, doi: 10.1109/JESTPE.2025.3550869.

[6] P. Lai, H. Wang, K. Chen, H. A. Mantooth, and Z. Chen, “Temperature-dependent ESD robustness in micrometer 4H-SiC CMOS technology,” accepted by the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2026).

[7] P. Lai, H. Wang, H. A. Mantooth and Z. Chen, Development and Evaluation of SiC LDMOS for High-Temperature Applications, in IEEE Journal of the Electron Devices Society, vol. 14, pp. 10-17, 2026, doi: 10.1109/JEDS.2025.3638982.

[8]  P. Lai, D. Gonzalez, S. Madhusoodhanan, S. Ahmed, B. Dong, H. A. Mantooth, S.-Q. Yu, and Z. Chen, “Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications,” Scientific Reports, vol. 12, no. 11685, pp. 1–10, 2022, doi: 10.1038/s41598-022-15631-7.

[9] P. Lai, H. Wang, K. Chen, H. A. Mantooth, and Z. Chen, “Threshold voltage hysteresis and bias temperature instabilities in SiC low-voltage CMOS transistors,” accepted by IEEE International Reliability Physics Symposium (IRPS 2026).

[10] P. Lai, X. Li, H. Wang, and Z. Chen, “Investigation of parasitic bipolar transistor in rail-based electrostatic discharge (ESD) protection circuits,” IEICE Electronics Express, vol. 16, no. 18, pp. 1–5, 2019, doi: 10.1587/elex.16.20190306.

[11] P. Lai, H. Wang, A. Abbasi, S. Roy, A. Rashid, H. A. Mantooth, and Z. Chen, “Investigation of ESD protection in SiC BCD process,” in Proc. 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Raleigh, NC, USA, 2019, pp. 405–409, doi: 10.1109/WiPDA46397.2019.8998959.

[12] P. Lai, A. Di Mauro, H. Wang, H. A. Mantooth, and Z. Chen, “Development of high-robustness SiC CMOS process for high-temperature applications in Multi-User Silicon-Carbide Research Lab,” accepted by the Government Microcircuit Applications & Critical Technology Conference (GOMACTech 2026).

[13] P. Lai, S. Chinnaiyan, D. Gonzalez, S. Ahmed, H. A. Mantooth, and Z. Chen, “High-temperature SiC power module with integrated LTCC-based gate driver,” in International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2022), Monterey, CA, USA, May 9-12, 2022.

IEEE Applied Power Electronics Conference and Exposition 2025 (APEC 2025)，分会场主席

IEEE Workshop on Wide Bandgap Power Devices and Applications 2025 (WiPDA 2025)，技术委员会成员

招收研究生和博士生，诚邀对碳化硅器件和功率模块感兴趣的同学加入。